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Product Information

Photolithography.com offers spin coaters, mask aligners, developing equipment, and etching equipment for laboratory applications.

Resist Coating images Exposure images Development images Etching
MA-20 MA-10 MA-60F M-2LF M-1S

Mask Aligners

Manual contact mask aligners.
Can handle silicon, glass, chemical compound, film, and various other materials as well as irregularly-sized substrates.
Three types of exposure sources—collimator, multi-mirror, and integrator—are available to suit your budget and applications.
Models are available that can handle substrates 5 × 5 mm to 100 × 100 mm in size and up to 6 inches in diameter.
Easily replaceable mask holders and sample stages make the aligners ideal for research and development.
Objective lenses for the alignment scope come in two magnifications (10× 20×) for accurate alignment, coating thickness measurement, and other applications.

MA-20 Mask Aligner

[Model suitable for 4-inch-dia. substrates]

MA-20 Mask Aligner

Product Specifications

Maximum substrate size4 in. dia.
Maximum substrate thickness2mm
Maximum mask size5 × 5 in.
UV lamp houseMulti-mirror type
Illuminance> 14 mW/cm2 (at 405 nm)
Illuminance uniformity< ±4.0%
Exposure sourceUV lamp, 500 W
Exposure wavelengthBroadband (g/h/i-line)
Exposure timerSwitched between modes:
0 to 999.9 sec (timer setting mode)
1 to 9999 counts (cumulative light quantity counter mode)
UV lamp degradation correction functionIncluded as standard
Alignment scopeMicroscope with two fields of view; objectives spaced at intervals of 18 to 60 mm
Alignment accuracy1.2 μm (when the 20× objective is used)
Alignment gap measurement functionIncluded as standard
Contact methodSoft contact and hard contact
Movement range of manipulatorX/Y: ±5 mm, fine movement in 1/8-mm steps, one full rotation
θ: 70°, fine movement in ±7° steps
Z: 4 mm (1 mm for pneumatic driving and 3 mm for coarse movement), fine movement in 0.16-mm steps
Movement range of crosswise motion stageX/Y: ±20 mm
Power supply100 to 110 V AC, 20 A
UtilityAir: 0.5 MPa, for driving the mask stage and microscope
N2: 0.5 MPa, for blowup
Vacuum: -0.08 MPa, for suction of masks and substrates
Outside dimensions (in mm, including anti-vibration table)1000 W × 1300 H × 800 D
Weight 290 kg
Anti-vibration tableIncluded as standard

Note: Specifications are subject to change without notice.

OFPR-800LB
Model used MA-20
Line width 1μm(L&S)
Resist OFPR-800LB (from Tokyo Ohka Kogyo Co., Ltd.)
Coating thickness 1 μm
e PR-THICK
Model used MA-20
Line width 8μm(rectangular holes)
Resist e PR-THICK (from eChem Solutions Japan Inc.)
Coating thickness 6.3 μm
SU-8
Model used MA-20
Line width 7μm(cylinders)
Resist SU-8
(from Nippon Kayaku Co., Ltd.)
Coating thickness 30 μm

Gap Sample Stage

【Features】

■ Enables proximity exposure.
■ Gap settings are configured physically using pins.
・Gap can be customized between 10 and 200 μm.
・The pins are accurate within ±5 μm.
・It can be set at intervals of 10 μm."
■ Ideal for exposure that requires no contact with the mask.
・Various SEM images of SU-8 obtained through experiments are available.
■ Can be added to your existing system.

Gap Sample Stage

Gap Sample Stage

Schematic

SEM Images Obtained by Performing Simplified Proximity Exposure Using the MA-20 SEM Images Obtained by Performing Simplified Proximity Exposure Using the MA-20

SEM Images Obtained by Performing Simplified Proximity Exposure Using the MA-20	SEM Images Obtained by Performing Simplified Proximity Exposure Using the MA-20

 Resist: SU-8, with a coating thickness of 50 μm. A high-pass filter is used.

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MA-10 Mask Aligner

[Model suitable for 4-inch-dia. substrates]

MA-10 Mask Aligner

Product Specifications

Maximum substrate size 4 in. dia.
Maximum substrate thickness 2 mm
Maximum mask size 5 × 5 in.
UV lamp house Collimator type
Illuminance > 8 mW/cm2 (at 405 nm)
Illuminance uniformity < ±8.5%
Exposure source UV lamp, 250 W (500 W optionally available)
Exposure wavelength Broadband (g/h/i-line)
Exposure timer 0 to 999.9 sec (timer setting mode)
UV lamp degradation correction function Cannot be attached.
Alignment scope Microscope with two fields of view; objectives spaced at intervals of 18 to 60 mm
Alignment accuracy 1.2 μm (when the 20× objective is used)
Alignment gap measurement function Optional
Contact method Soft contact and hard contact
Movement range of manipulator X/Y: ±5 mm, fine movement in 1/8-mm steps, one full rotation
θ: 70°, fine movement in ±7° steps
Z: 3 mm, fine movement in 0.16-mm steps
Movement range of crosswise motion stage X/Y: ±20 mm
Power supply 100 to 110 V AC, 20 A
Utility Air: 0.5 MPa, for driving the microscope
N2: 0.5 MPa, for blowup
Vacuum: -0.08 MPa, for suction of masks and substrates
Outside dimensions (mm) 700 W × 570 H × 650 D
Weight 150 kg
Anti-vibration table Optional

Note: Specifications are subject to change without notice.

OFPR-800LB
Model used MA-10
Line width 2 μm(L&S)
Resist OFPR-800LB (from Tokyo Ohka Kogyo Co., Ltd.)
Coating thickness 1 μm
e PR-THICK
Model used MA-10
Line width 8 μm (rectangular holes)
Resist e-PR THICK (from eChem Solutions Japan Inc.)
Coating thickness 6.2 μm
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MA-60F Mask Aligner

[Model suitable for 6-inch-dia. substrates]

MA-60F Mask Aligner

Product Specifications

Maximum substrate size6 in. dia.
Maximum substrate thickness2 mm
Maximum mask size7 × 7 in.
UV lamp houseIntegrator type
Illuminance> 18 mW/cm2 (at 405 nm)
Illuminance uniformity< ±5.0%
Exposure sourceUV lamp, 250 W (500 W optionally available)
Exposure wavelengthBroadband (g/h/i-line)
Exposure timerSwitched between modes:
0 to 999.9 sec (timer setting mode)
1 to 9999 counts (cumulative light quantity counter mode)
UV lamp degradation correction functionIncluded as standard
Alignment scopeMicroscope with two fields of view; objectives spaced at intervals of 18 to 60 mm
Alignment accuracy1.2 μm (when the 20× objective is used)
Alignment gap measurement functionIncluded as standard
Contact methodSoft contact and hard contact
Movement range of manipulatorX/Y: ±5 mm, fine movement in 1/8-mm steps, one full rotation
θ: 70°, fine movement in ±7° steps
X/Y: ±20 mm
Movement range of crosswise motion stageZ: 4 mm (1 mm for pneumatic driving and 3 mm for coarse movement), fine movement in 0.16-mm steps
Power supply100 to 110 V AC, 20 A
UtilityAir: 0.5 MPa, for driving the mask stage
N2: 0.5 MPa, for blowup
Vacuum: -0.08 MPa, for suction of masks and substrates
Outside dimensions (in mm, including anti-vibration table)1130 W × 1650 H × 800 D
Weight 360 kg
Anti-vibration tableIncluded as standard

Note: Specifications are subject to change without notice.

OFPR-800LB
Model used MA-60F
Line width 2 μm(L&S)
Resist OFPR-800LB (from Tokyo Ohka Kogyo Co., Ltd.)
Coating thickness 1 μm
e PR-THICK
Model used MA-60F
Line width 6 μm (rectangular holes)
Resist e-PR THICK (from eChem Solutions Japan Inc.)
Coating thickness 6.2 μm
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M-2LF Mask Aligner

[Model suitable for 6-inch-dia. substrates]

M-2LF Mask Aligner

Product Specifications

Maximum substrate size6 in. dia.
Maximum substrate thickness2 mm
Maximum mask size7 × 7 in.
UV lamp houseIntegrator type
Illuminance> 18 mW/cm2 (at 405 nm)
Illuminance uniformity< ±5.0%
Exposure sourceUV lamp, 250 W (500 W optionally available)
Exposure wavelengthBroadband (g/h/i-line)
Exposure timer0 to 999.9 sec (timer setting mode)
UV lamp degradation correction functionCannot be attached.
Alignment scopeMicroscope with two fields of view; objectives spaced at intervals of 18 to 60 mm
Alignment accuracy1.2 μm (when the 20× objective is used)
Alignment gap measurement functionCannot be attached.
Contact methodSoft contact (Hard contact optionally available)
Movement range of manipulatorX/Y: ±5 mm, fine movement in 1/8-mm steps, one full rotation
θ: 70°, fine movement in ±7° steps
Z: 10 mm, fine movement in 0.16-mm steps
Movement range of crosswise motion stageOptional
Power supply100 to 110 V AC, 20 A
UtilityN2: 0.5 MPa for hard contact
Vacuum: -0.08 MPa, for suction of masks and substrates
Outside dimensions (in mm, including anti-vibration table)1000 W × 1680 H × 800 D
Weight 280 kg
Anti-vibration tableIncluded as standard

Note: Specifications are subject to change without notice.

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M-1S Mask Aligner

[Model suitable for 3-inch-dia. substrates]

M-1S Mask Aligner

Product Specifications

Maximum substrate size3 in. dia.
Maximum substrate thickness 2 mm
Maximum mask size4 × 4 in.
UV lamp houseCollimator type
Illuminance> 8 mW/cm2 (at 405 nm)
Illuminance uniformity< ±8.5%
Exposure sourceUV lamp, 250 W
Exposure wavelengthBroadband (g/h/i-line)
Exposure timer0 to 999.9 sec (timer setting mode)
UV lamp degradation correction functionCannot be attached.
Alignment scopeStereo microscope (zoom system)
Alignment accuracy3.7 μm (with zoom ratio set to 1×)
Alignment gap measurement functionCannot be attached.
Contact methodSoft contact (Hard contact optionally available)
Movement range of manipulatorX/Y: ±5 mm, fine movement in 1/8-mm steps, one full rotation
θ: 70°, fine movement in ±7° steps
Z: 3 mm, fine movement in 0.16-mm steps
Movement range of crosswise motion stageCannot be attached.
Power supply100 to 110 V AC, 20 A
UtilityN2: 0.5 MPa for hard contact
Vacuum: -0.08 MPa, for suction of masks and substrates
Outside dimensions (mm)800 W × 730 H × 500 D
Weight 100 kg
Anti-vibration tableOptional

Note: Specifications are subject to change without notice.

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